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DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

By C.J. Hwang, H.M.H. Chong, M. Holland, I.G. Thayne and K. Elgaid

Abstract

A broadband low-loss, ultra-low-power consumption transmit/ receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, and P-1dB better than 12 dBm with DC power consumption of less than 6 mu

Publisher: 'Institution of Engineering and Technology (IET)'
Year: 2009
DOI identifier: 10.1049/el.2009.0684
OAI identifier: oai:eprints.gla.ac.uk:34805
Provided by: Enlighten
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