Skip to main content
Article thumbnail
Location of Repository

Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

By Jia-Hong Zhang, Qing-An Huang, Hong Yu and Shuang-Ying Lei


In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors

Topics: Article
Publisher: Molecular Diversity Preservation International (MDPI)
OAI identifier:
Provided by: PubMed Central
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://www.pubmedcentral.nih.g... (external link)
  • Suggested articles


    1. (2003). 6×6 effective mass Hamiltonian for heterostructures grown on (11N)-oriented substrates.
    2. (2001). A COMS humidity sensor with onchip calibration.
    3. (1994). Analytic model for the valence-band structure of a strained quantum well.
    4. (1987). Band mixing effects on quantum well gain.
    5. (2008). Bandstructure effects in silicon nanowire electron transport.
    6. (2007). Bandstructure effects in ultrascaled silicon nanowires.
    7. (2009). by the authors; licensee Molecular Diversity Preservation International,
    8. (2008). CMOS humidity Sensor system using carbon nitride film as sensing materials. Sensors
    9. (2004). Controlled growth and structures of molecular-scale silicon nanowires. Nano Lett.
    10. (1999). Development and characterization of a surface micromachined FET pressure sensor on a CMOS process.
    11. (2007). Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells.
    12. (2008). Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors.
    13. (2008). Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors.
    14. (2004). Finite element analysis of valence band structures in quantum wires.
    15. (2006). First principles simulations of the structural and electronic properties of silicon nanowires.
    16. (2006). Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature
    17. (2003). High performance silicon nanowire field effect transistors. Nano Lett.
    18. (2003). Highperformance thin-film transistors using semiconductor nanowires and nanoribbons. Nature
    19. (2007). Hole mobility in silicon inversion layers: stress and surface orientation.
    20. (2007). Integrated inductors for RF transmitters in CMOS/MEMS smart microsensor systems. Sensors
    21. (2007). Modeling and fabrication of micro FET pressure sensor with circuits. Sensors
    22. Motion of electrons and holes in perturbed periodic fields.
    23. (2001). Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science
    24. (2003). Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations.
    25. (2006). Physics of hole transport in strained silicon MOSFET inversion layers.
    26. (2005). Radius-dependent polarization anisotropy in semiconductor nanowires.
    27. Six-band k.p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain and silicon thickness.
    28. (2003). Small-diameter silicon nanowire surfaces. Science
    29. (1992). Spin-orbit-coupling effects on the valence band structure of strained semiconductor quantum wells.
    30. (2008). Theoretical study of electromechanical property in a p-type silicon nanoplate for mechanical sensors.
    31. (2003). Theory of ballistic nanotransistors.

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.