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A high-performance quantum dot superluminescent diode with a two-section structure

By Xinkun Li, Peng Jin, Qi An, Zuocai Wang, Xueqin Lv, Heng Wei, Jian Wu, Ju Wu and Zhanguo Wang

Abstract

Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated

Topics: Nano Express
Publisher: Springer
OAI identifier: oai:pubmedcentral.nih.gov:3339635
Provided by: PubMed Central
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