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Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films

By Olivier Debieu, Julien Cardin, Xavier Portier and Fabrice Gourbilleau

Abstract

In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd3+ demonstrating the efficient energy transfer between Si-np and Nd3+ and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd3+ PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd3+

Topics: Nano Express
Publisher: Springer
OAI identifier: oai:pubmedcentral.nih.gov:3211213
Provided by: PubMed Central

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Citations

  1. (2006). A: Interaction between amorphous silicon nanoclusters and neodymium ions. Appl Phys Lett
  2. (2004). A: Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2. Nucl Instrum Meth. B
  3. (2008). Active emitters based on nanostructured Si.
  4. (2002). An original approach for the fabrication of Si/SiO2 multilayers using reactive magnetron sputtering. Thin Solid Films
  5. (2003). Battaglin G: Room-temperature 1.54 μm photoluminescence from Erdoped Si-rich silica layers obtained by reactive magnetron sputtering.
  6. (2008). Camy P: Spectroscopic studies of Nd3+-doped silicon-rich silicon oxide films. Mater Sci Eng
  7. (2006). Catunda T: Normalizedlifetime thermal-lens method for the determination of luminescence quantum efficiency and thermo-optical coefficients: Application to Nd3 +-doped glasses. Phys Rev B
  8. (1994). CW: Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microcIusters and erbium ions.
  9. (2000). Enhanced rare earth luminescence in silicon nanocrystals.
  10. (1999). F: The excitationmechanism of rare-earth ions in silicon nanocrystals. Appl Phys A Mater Sci Process
  11. (2010). High Energy Excitation Transfer from Silicon Nanocrystals to Neodymium Ions in Silicon-Rich Oxide Film. Electrochem Solid State
  12. (2001). Ilharco LM: The defect structure of sol-gel-derived silica/ polytetrahydrofuran hybrid films by FTIR.
  13. (2003). Infrared spectroscopy of sol-gel derived silica-based films: a spectra-microstructure overview.
  14. (2001). Katsumata T: Interfacial reactions between thin rare-earth-metal oxide films and Si substrates. Appl Phys Lett
  15. (1998). Kitano T: Infrared studies of transition layers at SiO2/Si interface.
  16. (2004). Miśta W: Hydrothermal synthesis of precursors of neodymium oxide nanoparticles. Solid State Sci
  17. (2006). Nd3+ photoluminescence study of Nd-doped Si-rich silica films obtained by reactive magnetron sputtering.
  18. (2004). Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission.
  19. (1991). PR: Quantum efficiency and excited-state relaxation dynamics in neodymium-doped phosphate laser glasses.
  20. (2002). Recent developments in rare-earth doped materials for optoelectronics. Prog Quant Electron
  21. (1999). Spectroscopic ellipsometry analyses of sputtered Si/SiO2 nanostructures.
  22. (2008). Structural characterization of silicon nanocrystals from amorphous silicon oxide materials.
  23. (2009). Structural studies of annealed neodymia-silica composite synthesized by solgel technique.
  24. (1998). Study of SiOx decomposition kinetics and formation of Si nanocrystals
  25. (2003). The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide. Appl Phys Lett

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