Article thumbnail

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

By Thomas H Loeber, Dirk Hoffmann and Henning Fouckhardt

Abstract

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 1010 cm−2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 and 1.035 μm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K

Topics: Full Research Paper
Publisher: Beilstein-Institut
OAI identifier: oai:pubmedcentral.nih.gov:3148065
Provided by: PubMed Central
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://www.pubmedcentral.nih.g... (external link)

  • To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.

    Suggested articles