Fano-shaped impurity spectral density, electric-field-induced in-gap state and local magnetic moment of an adatom on trilayer graphene


Recently, the existence of local magnetic moment in a hydrogen adatom on graphene has been confirmed experimentally [Gonz\'{a}lez-Herrero et al., Science, 2016, 352, 437]. Inspired by this breakthrough, we theoretically investigate the top-site adatom on trilayer graphene (TLG) by solving the Anderson impurity model via self-consistent mean field method. The influence of the stacking order, the adsorption site and external electric field are carefully considered. We find that, due to its unique electronic structure, the situation of the TLG is drastically different from that of the monolayer graphene. Firstly, the adatom on rhombohedral stacked TLG (r-TLG) can have a Fano-shaped impurity spectral density, instead of the normal Lorentzian-like one, when the impurity level is around the Fermi level. Secondly, the impurity level of the adatom on r-TLG can be tuned into an in-gap state by an external electric field, which strongly depends on the direction of the applied electric field and can significantly affect the local magnetic moment formation. Finally, we systematically calculate the impurity magnetic phase diagrams, considering various stacking orders, adsorption sites, doping and electric field. We show that, because of the in-gap state, the impurity magnetic phase of r-TLG will obviously depend on the direction of the applied electric field as well. All our theoretical results can be readily tested in experiment, and may give a comprehensive understanding about the local magnetic moment of adatom on TLG.Comment: 11 pages, 9 figure

Similar works

Full text e-Print ArchiveProvided a free PDF (195.62 KB)
Last time updated on June 19, 2017View original full text link

This paper was published in e-Print Archive.

Having an issue?

Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.