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Pentacene-Gate Dielectric Interface Modification with Silicon Nanoparticles for OTFTs

By J. Jakabovic, J. Kovac, R. Srnanek, M. Weis, M. Sokolsky, K. Broch, F. Schreiber, D. Donoval and J. Cirak

Abstract

AbstractWe report on the properties of pentacene layers and OTFTs (Organic Thin Film Transistors) deposited on semiconductor-gate insulator interfaces covered with silicon nanoparticles (SiNPs) monolayer prepared by the Langmuir-Blodgett method compared to a reference sample (without SiNPs) prepared in an otherwise identical way. To analyse the structural quality, micro-Raman spectroscopy was employed and the correspondence between thin and bulk phase of the integral intensities peaks ratio (α) at 1154 and 1158cm-1 (α = Int1154 /Int1158) was evaluated. The AFM analysis of the pentacene layers reveals that the different surface treatment of SiO2 gate insulator (hydrophobic or hydrophilic) before SiNPs monolayer deposition has a distinct influence on the formation of different pentacene grain size and morphology. We demonstrate the higher time stability of pentacene OTFT and increasing of saturation current (∼ 2.5 ×) behavior after storage time if the semiconductor-gate insulator interface is modified using a SiNP monolayer

Publisher: Published by Elsevier B.V.
Year: 2012
DOI identifier: 10.1016/j.phpro.2012.03.557
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