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A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy

By B.G. Mendis, M. MacKenzie and A.J. Craven

Abstract

Determining the bonding environment at a rough interface, using for example the near-edge fine structure in electron energy loss spectroscopy (EELS), is problematic since the measurement contains information from the interface and surrounding matrix phase. Here we present a novel analytical method for determining the interfacial EELS difference spectrum (with respect to the matrix phase) from a rough interface of unknown geometry, which, unlike multiple linear least squares (MLLS) fitting, does not require the use of reference spectra from suitable standards. The method is based on analysing a series of EELS spectra with variable interface to matrix volume fraction and, as an example, is applied to a TiN/poly-Si interface containing oxygen in a HfO2-based, high-k dielectric gate stack. A silicon oxynitride layer was detected at the interface consistent with previous results based on MLLS fitting

Topics: QC
Publisher: Elsevier
Year: 2010
OAI identifier: oai:eprints.gla.ac.uk:32590
Provided by: Enlighten

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Citations

  1. (1996). Electron Energy-Loss Spectroscopy in the Electron Microscope, doi
  2. (2005). Electron Spetroscopy and Related Phenomena, doi
  3. (2008). Nanoanalysis of high- k dielectrics on semiconductors, doi

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