der these conditions. These parameters applied only to the specific reactor dimensions and geometry. Breakdown voltage measurement--The breakdown voltage between two tungsten probes touching the GaAs surface at a short distance apart is measured. Breakdown voltages ranging from almost zero to more than 1000V are measured. When the GaAs surfaces are specular and de-fect free, the breakdown voltages are between 15 and 50V, corresponding tothe carrier concentrations on the order of 5 • 10 TM cm-3. When the As/Ga ratio is low, the breakdown voltage is lower and can even reach almost zero volt, indi-cating a very high carrier concentration. When the surfaces are rough, the breakdown voltages can be higher than 1000V, indicating the polycrystalline nature. Carrier mobility.--Ha]l measurement using a van de

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