Void Formation in Phosphosilicate Glass Film with Heat-Treatment in H2 Atmosphere

Abstract

The void formation process and phosphorus behavior in phosphosilicate glass film deposited by chemical vapor depo-sition techniques were investigated. The films were heat-treated three times, first in N2 atmosphere for densification, then in H2 or N2 atmosphere, and after that in N ~ atmosphere. It was found that (i) void formation takes place with the third heat-treatment in N ~ atmosphere, (ii) with the second heat-treatment i H2 atmosphere, absorbance of P=O band at 1330 cm-~ decreases and absorbance of band at 1250 cm-I increases, but further absorbance change does not take place with the third heat-treatment. The gain in absorbance ofthe band at 1250 cm-1 is proportional to the loss in absorbance ofthe P=O band at 1330 cm-1. The quantity of phosphorus products formed with heat-treatment i H2 atmosphere was estimated from the absorbance change of the P = O band at 1330 cm-1. Comparing the quantity of the phosphorus products with the void size an

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