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Void Formation in Phosphosilicate Glass Film with Heat-Treatment in H2 Atmosphere

By R. F. W. Pease, J. F. Gibbons, This Journal, J. C. C. Fan, M. W. Geis, B. -y. Tsaur, J. C. C. Fan, M. W. Geis, B. -y. Tsaur, L. Jastrzebski, J. F. Corboy, R. H. Pagliaro, P. B. Hirsch, A. Howie, M. J. Whelan, Electron Microscopy, M. S. Abrahams, J. Blanc, C. J. Buiocchi, L. Jastrzebski, J. F. Corboy, J. T. Mcginn, Hideaki Takeuchi and Junichi Murota

Abstract

The void formation process and phosphorus behavior in phosphosilicate glass film deposited by chemical vapor depo-sition techniques were investigated. The films were heat-treated three times, first in N2 atmosphere for densification, then in H2 or N2 atmosphere, and after that in N ~ atmosphere. It was found that (i) void formation takes place with the third heat-treatment in N ~ atmosphere, (ii) with the second heat-treatment i H2 atmosphere, absorbance of P=O band at 1330 cm-~ decreases and absorbance of band at 1250 cm-I increases, but further absorbance change does not take place with the third heat-treatment. The gain in absorbance ofthe band at 1250 cm-1 is proportional to the loss in absorbance ofthe P=O band at 1330 cm-1. The quantity of phosphorus products formed with heat-treatment i H2 atmosphere was estimated from the absorbance change of the P = O band at 1330 cm-1. Comparing the quantity of the phosphorus products with the void size an

Topics: tended Abstracts, Vol. 82-1, Montreal, Quebec
Year: 2016
OAI identifier: oai:CiteSeerX.psu:10.1.1.1015.6535
Provided by: CiteSeerX
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