Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

Abstract

Abstract—A simplified and integrated technique has been proposed to form an oxide/nitride storage dielectric in a single-furnace process by low-pressure oxidation and nitride film deposition with an extra N2O treatment for the trench dynamic random access memory (DRAM). Compared to the conventional nitride/oxide dielectric, this newly developed dielectric enjoys cell-capacitance-enhancement factor as high as 12.5 % without de-grading the leakage current and electron-trapping property. From the reliability test, the qualification for the DRAM application is also proven by the dielectric lifetime longer than 10-years. Most importantly, this technique can reduce the production cycle time without an additional equipment investment, which is essen-tial in the cost-competitive DRAM arena. Index Terms—N2O treatment, oxide/nitride (ON) stack, single-furnace process, storage dielectric, trench dynamic random access memory (DRAM). I

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Last time updated on 12/04/2017

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