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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

By Yang Fu-Hua He Zhi Sun Guo-Sheng Zhao Wan-Shun Wang Lei Yan Guo-Guo Liu Bin Fan Zhong-Chao Liu Xing-Fang Dong Lin Liu Sheng-Bei Zhang Feng Zheng Liu
Topics: 半导体材料
Year: 2013
DOI identifier: 10.1088/1674-1056/22/9/097302
OAI identifier: oai:ir.semi.ac.cn:172111/24568
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