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Quantum cascade infrared photodetectors

By Junqi Liu, Shenqiang Zhai, Ning Kong, Lu Li, Fengqi Liu, Lijun Wang, Zhanguo Wang and J.(jqliu@semi.ac.cn) Liu

Abstract

Semiconductor-based mid- and far-infrared detectors have wide prospects for applications in imaging, sensing, security and defense field. At present, the quantum well infrared photodetector(QWIP) is one of the main technology in this field. On the other hand, the performance of the conventional QWIPs is limited by the bigger dark current and the lower operation temperature. Quantum cascade detector(QCD) is a new type of photovoltaic QWIP. Its operation principle is based on intersubband transitions in quantum wells embedded in an asymmetric conduction band potential, which enables the excited electrons to transport in the direction of potential drop without bias voltage. Since the invention, this kind of device has attracted much attention and experienced a rapid development. The latest results of institute of semiconductors of CAS about the research on quantum cascade photovoltaic infrared detector in3-5μm and8-12μm range were presented systematically

Topics: Detectors, Electron Mobility, Infrared Detectors, Optoelectronic Devices, Photovoltaic Effects, Quantum Chemistry, Semiconductor Quantum Wells, 半导体材料, detectors, electron mobility, infrared detectors, optoelectronic devices, photoconductivity, quantum chemistry, quantum well devices, sensors, sensor placement, sensor deployment, sensor localisation, sensor positioning, sensing devices, pickoffs, pickups, probes (instruments), probes (sensors), electrons--mobility, mobility of electrons, conduction electron mobility, infra-red detectors, ir detectors, photovoltaic detectors, superconducting infrared detectors, submillimetre wave detectors, sub-mm wave detectors, superconducting photodetectors, superconducting ultraviolet detectors, terahertz wave detectors, photo electric devices, photo electronic devices, photoelectronic devices, opto-isolators, opto-couplers, optrons, photoelectric devices, 光电流, photocurrent, photogalvanic effects, photovoltaic effects, staebler-wronski effect, surface photovoltage, conductivite photoelectrique, photoleitung, photoresistivity, 光电导性, chemistry, quantum, semiconductor quantum wells
Year: 2011
OAI identifier: oai:ir.semi.ac.cn:172111/23113
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