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High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

By Liu JQ (Liu Junqi), Kong N (Kong Ning), Li L (Li Lu), Liu FQ (Liu Fengqi), Wang LJ (Wang Lijun), Chen JY (Chen Jianyan), Wang ZG (Wang Zhanguo) and Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn Beijing 100083 POB 912 Key Lab Semicond Mat Sci Inst Semicond Chinese Acad Sci JQ Liu

Abstract

This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization

Topics: Well Infrared Photodetectors, 半导体材料
Year: 2010
DOI identifier: 10.1088/0268-1242/25/7/075011
OAI identifier: oai:ir.semi.ac.cn:172111/11372
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