High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

Liu JQ (Liu Junqi); Kong N (Kong Ning); Li L (Li Lu); Liu FQ (Liu Fengqi); Wang LJ (Wang Lijun); Chen JY (Chen Jianyan); Wang ZG (Wang Zhanguo); Liu, JQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jqliu@semi.ac.cn

oai:ir.semi.ac.cn:172111/11372

High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature

Authors: Liu JQ (Liu Junqi)
Kong N (Kong Ning)
Li L (Li Lu)
Liu FQ (Liu Fengqi)
Wang LJ (Wang Lijun)
Chen JY (Chen Jianyan)
Wang ZG (Wang Zhanguo)
JQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected] Liu
Publication date: 1 January 2010
Publisher
Doi

Abstract

This work was supported by the National Research Projects of China (grant numbers are 60525406, 60736031, 60806018, 60906026, 2006CB604903, 2007AA03Z446 and 2009AA03Z403, 10990100, respectively). The authors would like to thank P Liang, Y Hu, H Sun, X L Zhang, B J Sun, H L Zhen and N Li for their help in processing and characterization

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