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Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

By P. W. Liu, G. Tsai, H. H. Lin, A. Krier, Q. D. Zhuang and M. M Stone

Abstract

Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ~0.12 in the quantum well the photoluminescence emission band covers the CO2 absorption peak making it suitable for use in sources for CO2 detection

Year: 2006
OAI identifier: oai:eprints.lancs.ac.uk:4410
Provided by: Lancaster E-Prints
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