The electrical properties of a 2D packed metallic pentagons have been studied. The electrical characterization of such metallic pentagon heaps, like i-V measurements, has been achieved. Two distinct regimes have been shown. They are separated by a transition line along which the system exhibits a memory effect behavior due to the irreversible improvement of electrical contacts between pentagons (hot spots). A limit current density has been found. Copyright Springer-Verlag Berlin/Heidelberg 2003
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