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Electrical characterization of acceptor levels in Be-implanted GaN

By Yoshitaka Nakano, Takashi Jimbo, タカシ ジンボ and 孝志 神保

Abstract

We have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050°C with a SiO2 encapsulation layer. Capacitance-frequency measurements showed a typical dispersion effect characteristic of deep acceptors in fabricated Schottky diodes. Thermal admittance spectroscopy measurements revealed a discrete deep level located at ? 231meV above the valence band. This energy level is in reasonable agreement with the frequency dependence of the capacitance in view of the impurity transition frequency. Therefore, this energy level can most probably be assigned to a Be-related deep acceptor

Publisher: American Institute of Physics
Year: 2002
DOI identifier: 10.1063/1.1523633
OAI identifier: oai:repo.lib.nitech.ac.jp:123456789/4170
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