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Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

By Shiro Sakai, Tetsuo Soga, Masanari Takeyasu, Masayoshi Umeno, テツオ ソガ, マサヨシ ウメノ, 哲夫 曾我 and 正義 梅野

Abstract

AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5°C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate

Publisher: American Institute of Physics
Year: 1986
DOI identifier: 10.1063/1.96515
OAI identifier: oai:repo.lib.nitech.ac.jp:123456789/4285
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