Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Sakai, Shiro; Soga, Tetsuo; Takeyasu, Masanari; Umeno, Masayoshi; ソガ, テツオ; ウメノ, マサヨシ; 曾我, 哲夫; 梅野, 正義

doi:10.1063/1.96515

Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

By Shiro Sakai, Tetsuo Soga, Masanari Takeyasu, Masayoshi Umeno, テツオソガ, マサヨシウメノ, 哲夫曾我 and 正義梅野

Abstract

AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5°C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate

Publisher: American Institute of Physics

Year: 1986

DOI identifier: 10.1063/1.96515

OAI identifier: oai:repo.lib.nitech.ac.jp:123456789/4285

Provided by: Nagoya Institute of Technology Repository System

Download PDF:
_{Sorry, we are unable to provide the full text but you may find it at the
following location(s):}

http://repo.lib.nitech.ac.jp/b... (external link)

http://link.aip.org/link/?apl/... (external link)

http://repo.lib.nitech.ac.jp/h... (external link)

Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Abstract

Suggested articles