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USE PROSPECTS IN MICROELECTRONICS FOR POLYCRYSTALLINE SILICON FILM STRUCTURES WITH p–n JUNCTION

Abstract

The paper discusses perspectives of elaborating microelectronic and optoelectronic devices on polycrystalline silicon films. The I-V features of structures with p-n-junction, formed by using methods of р-type conductivity layer grow, thermal diffusion and ion-implantation of boron atoms into n-type polycrystalline silicon layer are compared. The I-V feature with S-form curve of the investigated structures conditioned by changing of the conductivities of base and grain boundaries under thermal processing are revealed.Polycrystalline silicon, grain boundaries, ion-implantation, microelectronics, negative differential resistance, photodiode, I-V characteristics, Research and Development/Tech Change/Emerging Technologies,

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Last time updated on 06/07/2012

This paper was published in Research Papers in Economics.

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