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USE PROSPECTS IN MICROELECTRONICS FOR POLYCRYSTALLINE SILICON FILM STRUCTURES WITH p–n JUNCTION

By Raimjon Aliev and Erkin Muhtarov

Abstract

The paper discusses perspectives of elaborating microelectronic and optoelectronic devices on polycrystalline silicon films. The I-V features of structures with p-n-junction, formed by using methods of р-type conductivity layer grow, thermal diffusion and ion-implantation of boron atoms into n-type polycrystalline silicon layer are compared. The I-V feature with S-form curve of the investigated structures conditioned by changing of the conductivities of base and grain boundaries under thermal processing are revealed.Polycrystalline silicon, grain boundaries, ion-implantation, microelectronics, negative differential resistance, photodiode, I-V characteristics, Research and Development/Tech Change/Emerging Technologies,

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