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45nm Gateless Anti-Fuse Cell with CMOS Fully Compatible Process

By Yi-Hung Tsai

Abstract

[[abstract]]A new gateless anti-fuse cell with 45nm CMOS fully compatible process has been developed for advanced programmable logic applications. This gateless anti-fuse cell processed by pure logic process and decoupled with logic gate oxide has a highly stable and five orders of on/off current window. It also exhibits superior program performance by only 5V operation with no more than 10A programming current. This new nitride gateless anti-fuse cell is a very promising logic OTP solution with fully CMOS compatible process below 90nm node.[[fileno]]2030158030039[[department]]電機工程學

Topics: Anti-Fuse, CMOS, [[classification]]45
Publisher: Institute of Electrical and Electronics Engineers
Year: 2012
DOI identifier: 10.1109/IEDM.2007.4418872
OAI identifier: oai:nthur.lib.nthu.edu.tw:987654321/68610
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