Performance improvement of flash memories with HfOxN y/SiO2 stack tunnel dielectrics


[[abstract]]The operating characteristics of flash memory devices with tunnel dielectrics comprising a hafnium oxynitride (HfOxNy) layer or a hafnium oxynitride/silicon dioxide (HfOxNy/SiO 2) stack, annealed at various temperatures, were studied. The present work indicates that flash memory devices with a HfOxN y/SiO2 stack tunnel dielectric have a higher program/erase speed and better reliability than those with a single HfOxN y layer. The stack tunnel dielectric composed of a thick HfO xNy layer and a thin SiO2 layer exhibits an even better performance in the flash memory operation. In addition, devices with HfOxNy/SiO2 stack tunnel dielectrics annealed at 850°C show the best performance in terms of the program/erase speed, charge retention, and read disturbance. © 2006 American Vacuum Society.[[fileno]]2060110010019[[department]]工程與系統科學

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