An experimental single-layer active microwave absorber in described. The absorber is a planar structure based upon the topology of a Salisbury screen, but in which the conventional resistive layer is replaced by an active frequency selective surface (FSS) controlled by pin diodes. The resulting structure has superior reflectivity-bandwidth characteristics compared to conventional passive absorbers of corresponding thickness. Measured data are presented and show that the reflectivity response of the absorber can be controlled over the frequency band from 9 to 13 GHz
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