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High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents\ud

By H.Y. Liu, D.T. Childs, T.J. Badcock, K.M. Groom, I.R. Sellers, M. Hopkinson, R.A. Hogg, D.J. Robbins, D.J. Mowbray and M.S. Skolnick

Abstract

The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-/spl mu/m multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm/sup 2/ are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm/sup 2/ for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets

Year: 2005
OAI identifier: oai:eprints.whiterose.ac.uk:815

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