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Excess noise measurement in In0.53Ga0.47As \ud

By Y.L. Goh, J.S. Ng, C.H. Tan, W.K. Ng and J.P.R. David


The excess noise due to impact ionization has been measured explicitly for the first time in In/sub 0.53/Ga/sub 0.47/As. By using a phase sensitive detection technique, the noise due to avalanche current was determined even in the presence of high tunneling currents. The excess noise due to pure electron injection measured on a series of thick In/sub 0.53/Ga/sub 0.47/As p/sup +/-i-n/sup +/ diodes suggests large electron to hole ionization coefficient ratio between 3.7 at electric field of 310 kV/spl middot/cm/sup -1/ to 5.3 at 260 kV/spl middot/cm/sup -1/. Excess noise was also measured at fields as low as 155 kV/spl middot/cm/sup -1/ suggesting that significant impact ionization occurs at these low fields. The multiplication and excess noise calculated using published ionization coefficients and ignoring dead space effects, gave good agreement with the experimental data for mixed and pure electron injection

Year: 2005
OAI identifier: oai:eprints.whiterose.ac.uk:892

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