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Field dependence of impact ionization coefficients in In0.53Ga0.47As \ud

By J.S. Ng, C.H. Tan, J.P.R. David, G. Hill and G.J. Rees

Abstract

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes

Year: 2003
OAI identifier: oai:eprints.whiterose.ac.uk:899

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