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Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9) \ud

By B.K. Ng, J.P.R. David, G.J. Rees, R.C. Tozer, M. Hopkinson and R.J. Airey

Abstract

Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect is also observed in thick Al/sub x/Ga/sub 1-x/As structures with x /spl ges/ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63

Year: 2002
OAI identifier: oai:eprints.whiterose.ac.uk:901

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