Skip to main content
Article thumbnail
Location of Repository

Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9) \ud

By B.K. Ng, J.P.R. David, G.J. Rees, R.C. Tozer, M. Hopkinson and R.J. Airey


Measurements carried out on thick Al/sub x/Ga/sub 1-x/As (x < 0.9) diodes showed that the ionization coefficients of Al/sub x/Ga/sub 1-x/As become widely different when x /spl ges/ 0.63 and are virtually independent of x for x /spl ges/ 0.72. A strong dead space effect is also observed in thick Al/sub x/Ga/sub 1-x/As structures with x /spl ges/ 0.6. The breakdown voltage is found to increase at a slower rate with x when x > 0.63

Year: 2002
OAI identifier:

Suggested articles

To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.