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Temperature dependence of the c-axis resistivity of high-Tc layered oxides

By N. Kumar and A.M. Jayannavar

Abstract

Restricted AccessElectrical transport along the c axis of high-Tc layered oxides is pictured as a coherent interplanar tunneling between neighboring layers blocked by repeated intraplanar incoherent scatterings. This gives the same temperature dependence for the c-axis resistivity as that for the in-plane resistivity. Additional temperature dependence can arise from the temperature-dependent renormalization of the tunneling matrix element by an ohmic coupling to adiabatic phonons because of the large effective electron mass along the c axis. Our calculation is consistent with recent experimental results on single crystals, and makes some definite predictions that can be put to test

Topics: Theory of electronic transport, Scattering mechanisms, Electrical and thermal conduction in crystalline metals and alloys
Publisher: The American Physical Society
Year: 1992
DOI identifier: 10.1103/PhysRevB.45.5001
OAI identifier: oai:dspace.rri.res.in:2289/5158
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