Article thumbnail

Temperature dependence of the c-axis resistivity of high-Tc layered oxides

By N. Kumar and A.M. Jayannavar


Restricted AccessElectrical transport along the c axis of high-Tc layered oxides is pictured as a coherent interplanar tunneling between neighboring layers blocked by repeated intraplanar incoherent scatterings. This gives the same temperature dependence for the c-axis resistivity as that for the in-plane resistivity. Additional temperature dependence can arise from the temperature-dependent renormalization of the tunneling matrix element by an ohmic coupling to adiabatic phonons because of the large effective electron mass along the c axis. Our calculation is consistent with recent experimental results on single crystals, and makes some definite predictions that can be put to test

Topics: Theory of electronic transport, Scattering mechanisms, Electrical and thermal conduction in crystalline metals and alloys
Publisher: The American Physical Society
Year: 1992
DOI identifier: 10.1103/PhysRevB.45.5001
OAI identifier:
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • (external link)
  • (external link)
  • (external link)
  • Suggested articles

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.