InP DHBT-based IC technology for high-speed data communications

Abstract

In this paper, we report the achieved performance of devices and integrated circuits (ICs) using a manufacturable InP DHBT-based technology. High speed MBE grown InGaAs/InP DHBTs with an effective emitter junction area of 4.8 µm2 exhibited peak f(ind T) and f(ind MAX) values of 265 and 305 GHz, respectively, at a collector current density of 3.75 mA/µm2. Using this technology, a set of basic analog and digital IC building blocks, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 Gb/s and beyond, have been successfully designed and fabricated

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Fraunhofer-ePrints

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oai:fraunhofer.de:N-34747Last time updated on 11/15/2016

This paper was published in Fraunhofer-ePrints.

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