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InP/ZnSe/ZnS: A novel multishell system for InP quantum dots for improved luminescence efficiency and its application in a light-emitting device

By C. Ippen, T. Greco and A. Wedel

Abstract

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 5070% along with peak widths of 4550 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application

Year: 2012
DOI identifier: 10.1080/15980316.2012.683537
OAI identifier: oai:fraunhofer.de:N-216344
Provided by: Fraunhofer-ePrints
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