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Novel techniques for dopant contrast analysis on real IC structures

By J. Jatzkowski, M. Simon-Najasek and F. Altmann

Abstract

In this paper advanced techniques for dopant contrast imaging based on Scanning Electron Microscopy will be presented. It will be shown that biasing the pn-junction of Silicon based dopant structures significantly improves the sensitivity for dopant contrast imaging thus allowing to investigate low doped regions as well as sub-mu m scaled dopant profiles of transistor and diode structures in integrated circuits. This new imaging technique is demonstrated on a defective diode structure of an image sensor device

Topics: scanning electron microscopy, dopant contrast analysis, pn-junction of Silicon based dopant structures
Year: 2012
DOI identifier: 10.1016/j.microrel.2012.06.113
OAI identifier: oai:fraunhofer.de:N-223340
Provided by: Fraunhofer-ePrints
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