Skip to main content
Article thumbnail
Location of Repository

In-line hot-wire chemical vapor deposition of silicon-based coatings

By L. Schäfer, T. Harig, M. Höfer and A. Laukart

Abstract

Deposition of thin films by thermal activation of the gas phase via hot wires has the advantage of low system requirements and easy scale-up. To investigate the up-scaling of hot-wire chemical vapor deposition an in-line system with seven vacuum chambers including three hot-wire systems has been established. On areas up to 500 mm x 600 mm intrinsic hydrogenated silicon films have been deposited with in-line processing. Using design of experiments (DoE), we have investigated the combined influence of the factors silane flow, pressure, wire temperature T<sub>wire</sub> and film thickness on deposition rate, microstructure factor R*, and gas phase activation, respectively. Results show that it is possible to combine good microstructure of a-Si:H films with deposition rates greater than or equal 1.5 nm/s and good thickness uniformity. The properties of the deposited films were characterized for applications such as passivation of crystalline silicon solar cells and fabrication of thin film solar cells

Year: 2012
OAI identifier: oai:fraunhofer.de:N-229158
Provided by: Fraunhofer-ePrints
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://publica.fraunhofer.de/d... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.