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Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs

By F. Ospald, W. Zouaghi, J.-M. Rämer and René Beigang

Abstract

Several options for THz emitters and detectors operated at pump wavelengths around 1560 nm were investigated. Results from photoconductive antennas on In0.53Ga0.47As-based epilayers as well as DAST crystals are presented. Furthermore, the use of standard LTG GaAs antennas without frequency doubling is explored

Topics: antenna, crystal, detector, gallium arsenide, laser excitation, principal component analysis, pump laser, III-V semiconductor, terahertz wavedetector
Year: 2012
DOI identifier: 10.1109/IRMMW-THz.2012.6380150
OAI identifier: oai:fraunhofer.de:N-233022
Provided by: Fraunhofer-ePrints
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