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Recombination on locally processed wafer surfaces

By P. Saint-Cast, J. Nekarda, M. Hofmann, S. Kuehnhold and R. Preu

Abstract

This paper is revisiting the problem of recombination on locally processed area (contacts, local doping ...), based on the concept of point recombination rate (p(LPA)). The newly introduced effective point recombination rate (p(eff)) can be easily determined from the effective surface recombination velocity. It also allows predictions and comparisons in most of the practical cases. Further analysis allows the separation of the influence of p(LPA) from the one of the transport of the carrier in a transparent way. Due to its simplicity, transparency and accuracy, the model proposed here is believed to be more suitable to recent local processing technology than the existing analytical models

Topics: PV Produktionstechnologie und Qualit├Ątssicherung, Silicium-Photovoltaik, Charakterisierung, Zellen und Module
Year: 2012
DOI identifier: 10.1016/j.egypro.2012.07.061
OAI identifier: oai:fraunhofer.de:N-234574
Provided by: Fraunhofer-ePrints
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