Article thumbnail

The physical properties of grown p-i-n junctions in silicon carbide

By CAAJ Greebe
Topics: dissertations the and tu/e, materials science: dissertations, semiconductors and semiconductor physics (general), silicon carbide, semiconductor transitions
Publisher: Technische Hogeschool Eindhoven
Year: 1962
OAI identifier: oai:library.tue.nl:117420
Provided by: Repository TU/e
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://repository.tue.nl/11742... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.