In this work we report on modelling the electron transport in n-Si/SiGe structures. The\ud electronic structure is calculated within the effective-mass complex-energy framework,\ud separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is\ud lifted by strain, and additionally by size quantization. The transport is described via\ud scattering between quantized states, using the rate equations approach and tight-binding\ud expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon,\ud optical phonon, alloy and interface roughness scattering are taken in the model. The\ud calculated U/I dependence and gain profiles are presented for a couple of QC structures
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