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Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 mu m wavelengths

By V.D. Jovanovic, Z. Ikonic, D. Indjin, P. Harrison, V. Milanovic and R.A. Soref

Abstract

A criterion for strain balancing of wurtzite group-III nitride-based multilayer heterostructures is presented. Single and double strain-balanced GaN/AlGaN quantum well structures are considered with regard to their potential application in optoelectronic devices working at communication wavelengths. The results for realizable, strain-balanced structures are presented in the form of design diagrams that give both the intersubband transition energies and the dipole matrix elements in terms of the structural parameters. The optimal parameters for structures operating at lambda ~1.3 and 1.55 µm were extracted and a basic proposal is given for a three level intersubband laser system emitting at 1.55µm and depopulating via resonant longitudinal optical(LO)phonons (h omega(LO)approximate to 90 meV). © 2003 American Institute of Physics

Publisher: American Institute of Physics
Year: 2003
OAI identifier: oai:eprints.whiterose.ac.uk:1690

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