Analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using self-consistent rate equations simulations. The hole subband structure is calculated using the 6×6 k·p model, and then used to find carrier relaxation rates due to the alloy disorder, acoustic, and optical phonon scattering, as well as hole-hole scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results are presented for prototype THz Si/SiGe quantum cascade structures. © 2004 American Institute of Physics \ud \u
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