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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers \ud

By V.D. Jovanovic, S. Hofling, D. Indjin, N. Vukmirovic, Z. Ikonic, P. Harrison, J.P. Reithmaier and A. Forchel


A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/AlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of (4–6.5)×10(11) cm(–2) have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found. © 2006 American Institute of Physics \ud \ud \ud \u

Publisher: American Institute of Physics
Year: 2006
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