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Annealing-induced Fe oxide nanostructures on GaAs

By Y X Lu, E Ahmad, Y B Xu and S M Thompson

Abstract

We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy. These nanostripes; exhibited uniaxial magnetic anisotropy. The formation of these nanostructures is attributed to surface anisotropy, which in addition could explain the observed uniaxial magnetic anisotropy

Year: 2005
DOI identifier: 10.1109/TMAG.2005.855202
OAI identifier: oai:eprints.whiterose.ac.uk:1844

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