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XPS and XMCD study of Fe3O4/GaAs interface

By Y X Lu, J S Claydon, E Ahmad, Y B Xu, S M Thompson, Karen Wilson and G van der Laan

Abstract

Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs

Year: 2005
DOI identifier: 10.1109/TMAG.2005.854834
OAI identifier: oai:eprints.whiterose.ac.uk:1846

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