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Pseudo-Hall effect and anisotropic magnetoresistance in a micronscale Ni80Fe20 device

By A. Hirohata, C.C. Yao, D.G. Hasko, W.Y. Lee, Y.B. Xu and J.A.C. Bland

Abstract

The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micronscale Ni80Fe20, six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 Angstrom Au/300 Angstrom Ni80Fe20 film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE), The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe(-1) at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results

Year: 1999
DOI identifier: 10.1109/20.800608
OAI identifier: oai:eprints.whiterose.ac.uk:1849

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