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Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

By D.J. Freeland, D.A. Ritchie, Y.B. Xu, M. Tselepi, C.M. Guertler, W.Y. Lee, J.A.C. Bland, S.N. Holmes and N.K. Patel

Abstract

The interface magnetic and electronic properties of two Fe/III-V semiconductor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have been studied. A "magnetic interface", which is essential for the fabrication of magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furthermore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME device based on Fe/InAs are also discussed

Year: 1999
DOI identifier: 10.1109/20.800623
OAI identifier: oai:eprints.whiterose.ac.uk:1855

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