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Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility

By M Andreotti, W Baldini, R Calabrese, G Cibinetto, A Cotta Ramusino, C De Donato, R Faccini, M Fiorini, E Luppi, R Malaguti, A Montanari, A Pietropaolo, V Santoro, G Tellarini, L Tomassetti and N Tosi

Abstract

In this paper we present a study of the neutrons-induced damage in Silicon Photo- Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1MeV equivalent integrated dose was 6.2×109 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented

Year: 2014
DOI identifier: 10.1088/1748-0221
OAI identifier: oai:iris.unife.it:11392/2107212
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