In this paper we present a study of the neutrons-induced damage in Silicon Photo- Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1MeV equivalent integrated dose was 6.2×109 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented
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