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Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design

By V.Vadalà, A.Raffo, G.Bosi, G.Crupi and G.Vannini

Abstract

The manuscript presents a load-pull characterization technique for the design of power amplifiers in the millimeter-wave frequency band. The proposed approach is based on a recently proposed characterization technique which, by exploiting direct low-frequency nonlinear electron device measurements in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies. The proposed characterization technique, validated by means of measurements carried out at 20 GHz on a 0.15-μm GaAs pHEMT device, has been exploited for the first time in order to draw load-pull contours up to 60 GHz

Publisher: IEEE
Year: 2012
DOI identifier: 10.1109/ARFTG79.2012.6291176
OAI identifier: oai:iris.unife.it:11392/1732452
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