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High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology

By G.Crupi, D.Schreurs, A.Caddemi, A.Raffo, F.Vanaverbeke, G.Avolio, G.Vannini and W.De Raedt

Abstract

A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances

Year: 2011
DOI identifier: 10.1109/LMWC.2011.2160525
OAI identifier: oai:iris.unife.it:11392/1545798
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