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Gas-sensing applications of W-Ti-O-based nanosized thin films prepared by r.f. reactive sputtering

By M. FERRONI, GUIDI V., G. MARTINELLI, P. NELLI and G. SBERVEGLIERI

Abstract

Thin films were obtained by r.f. reactive sputtering from a Ti0.1–W0.9 target followed by heating in dry air. Their morphological and structural characteristics were studied by means of electron-microscopy techniques. Annealing at 600°C of a sample leads to a WO3 polycrystalline thin-film. A solution of Ti ions in the WO3 lattice causes the film to have higher surface-to-volume ratio and thereby higher gas-sensitivity with respect to pure WO3 sputtered thin films. This layer is highly sensitive to NO2 as concentrations lower than 1 ppm of NO2 are detected. Annealing the film at 800°C results in a TiO2-anatase nanostructured layer which is capable to detect few ppm of NO2 in dry air within the temperature range of 350–800°C

Year: 1997
OAI identifier: oai:iris.unife.it:11392/1203118
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