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Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge

By C. LOMBARDI, P. OLIVO, B. RICCO', E. SANGIORGI and M. VANZI

Abstract

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Publisher: IEEE / Institute of Electrical and Electronics Engineers Incorporated:445 Hoes Lane:Piscataway, NJ 08854:(800)701-4333, (732)981-0060, EMAIL: subscription-service@ieee.org, INTERNET: http://www.ieee.org, Fax: (732)981-9667
Year: 1982
OAI identifier: oai:iris.unife.it:11392/462031
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