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Modification of the Electronic Structure and Formation of an Accumulation Layer in Ultrathin Ba n GaN and Ba n AlGaN Interfaces

By G.V. Benemanskaya, S.N. Timoshnev, S.V. Ivanov, G.E. Frank Kamenetskaya, D.E. Marchenko and G.N Iluridze
Topics: Large scale facilities for research with photons neutrons and ions
Year: 2014
DOI identifier: 10.1134/s1063776114040098
OAI identifier: oai:helmholtz.HZB:81951
Provided by: HZB Repository
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