Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X ray microscopy

Abstract

Transmission X ray microscopy is employed to detect nanoscale valence changes in resistive switching SrTiO3 thin film devices. By recording Ti L edge spectra of samples in different resistive states, we could show that some spots with slightly distorted structure and a small reduction to Ti3 are already present in the virgin films. In the ON state, these spots are further reduced to Ti3 to different degrees while the remaining film persists in the Ti4 configuration. These observations are consistent with a self accelerating reduction within pre reduced extended growth defect

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oai:helmholtz.HZB:81084Last time updated on 11/12/2016

This paper was published in HZB Repository.

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