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Chemical speciation at buried interfaces in high temperature processed polycrystalline silicon thin film solar cells on ZnO Al

By C. Becker, M. Pagels, C. Zachäus, B. Pollakowski, B. Beckhoff, B. Kanngie er and B Rech


The combination of polycrystalline silicon poly Si thin films with aluminum doped zinc oxide layers ZnO Al as transparent conductive oxide enables the design of appealing optoelectronic devices at low costs, namely in the field of photovoltaics. The fabrication of both thin film materials requires high temperature treatments which are highly desired for obtaining a high electrical material quality. Annealing procedures are typically applied during crystallization and defect healing processes for silicon and can boost the carrier mobility and conductivity of ZnO Al layers. In a combined poly Si ZnO Al layer system an in depth knowledge of the interaction of both layers and the control of interface reactions upon thermal treatments is crucial. Therefore, we analyze the influence of rapid thermal treatments up to 1050 C on solid phase crystallized poly Si thin film solar cells on ZnO Al coated glass, focusing on chemical interface reactions and modifications of the poly Si absorber material quality. The presence of a ZnO Al layer in the solar cell stack was found to limit the poly Si solar cell performance with open circuit voltages only below 390 mV compared to 435 mV without ZnO film , even if a silicon nitride SiN diffusion barrier was included. A considerable amount of diffused zinc inside the silicon was observed. By grazing incidence x ray fluorescence spectrometry a depth resolving analysis of the elemental composition close to the poly Si SiN ZnO Al interface was carried out. Temperatures above 1000 C were found to promote the formation of new chemical compounds within about 10 nm of interface, such as zinc silicates Zn2SiO4 and aluminium oxide AlxOy . These results give valuable insights about the temperature limitations of Si ZnO thin film solar cell fabrication and the formation of high mobility ZnO layers by thermal annea

Topics: Renewable energies
Year: 2013
DOI identifier: 10.1063/1.4789599
OAI identifier: oai:helmholtz.HZB:71035
Provided by: HZB Repository
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